EE 4320-0

Brief

The silicon integrated circuit is surely one of the wonders of our age. The ability to fabricate tens of millions of individual components on a chip with an area of a few centimeter square has enabled the information age. This course attempts to describe not only the manufacturing practice associated with the technologies used in silicon chip fabrication, but also the underlying scientific basis for those technologies. This course will show the students how silicon field-effect transistors are made using the knowledge learned in the ULSI technologies. However, due to the limited implementation hours, students can only fabricate p-type or n-type MOSFET with characteristics measured and simulated.

Description

Course keywords: 半導體製造Semiconductor manufacturing, 場效電晶體 Field-effect transistors, 微影 Optical lithography, 鍍膜 Deposition, 濕式蝕刻 Wet Etching 一、課程說明(Course Description) The silicon integrated circuit is surely one of the wonders of our age. The ability to fabricate tens of millions of individual components on a chip with an area of a few centimeter square has enabled the information age. This course attempts to describe not only the manufacturing practice associated with the technologies used in silicon chip fabrication, but also the underlying scientific basis for those technologies. This course will show the students how silicon field-effect transistors are made using the knowledge learned in the ULSI technologies. However, due to the limited implementation hours, students can only fabricate p-type or n-type MOSFET with characteristics measured and simulated. 二、參考書籍(References) 1. J. D. Plummer, M. M. Deal, and P. B. Griffin, Silicon VLSI Technology, Prentice Hall, 2000. 2. Michael Quirk and Julian Serda, Semiconductor Manufacturing Technology, Prentice Hall, 2001. 3. Robert Doering and Yoshio Nishi, Handbook of Semiconductor Manufacturing Technology, CRC Press 2008. 三、教學方式(Teaching Method) 1. In Chinese 2. The TA will give the students a mini instruction of the fabrication process and principles. 五、教學進度(Syllabus) 1. MOS structure and MOS process flow 2. RCA clean and Wet oxidation for MOS 3. Optical lithography-1 + Wet etching for MOS 4. TCAD simulation Ⅰ (Process) 5. TCAD simulation Ⅱ (Device) 6. Exam of TCAD simulation 7. RTA for MOS 8. Wet etching 9. Optical lithography-2 + Wet etching for MOS 10. metallization for MOS via E-gun 11. Optical lithography-3 + Wet etching for MOS／Solar cell process flow 12. Backside metallization 13. Measurement of MOS 14. E-gun + RTA + Optical lithography-2 + Al wet etching for Solar cell 15. Measurement of Solar cell 六、成績考核(Evaluation) 1 Simulation test (50%) 2 Measurement report (50%)

Prerequisites

Timetable

Remarks

Restrictions

電機系大學部4年級,電資院學士班大學部4年級優先，第3次選課起開放全校修習

Compulsory

Elective

Cross Discipline

First Specialization

Second Specialization